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As Of Filer Filing For/On/As Docs:Size Issuer Agent 3/29/12 Trina Solar Ltd 20-F 12/31/11 99:17M Merrill Corp-MD/FA
Document/Exhibit Description Pages Size
1: 20-F Annual Report of a Foreign Private Issuer HTML 2.33M
2: EX-4.10 Instrument Defining the Rights of Security Holders HTML 129K
3: EX-4.11 Instrument Defining the Rights of Security Holders HTML 150K
4: EX-4.12 Instrument Defining the Rights of Security Holders HTML 114K
5: EX-8.1 Opinion re: Tax Matters HTML 48K
6: EX-11.1 Statement re: Computation of Earnings Per Share HTML 71K
7: EX-12.1 Statement re: Computation of Ratios HTML 32K
8: EX-12.2 Statement re: Computation of Ratios HTML 32K
9: EX-13.1 Annual or Quarterly Report to Security Holders HTML 27K
10: EX-13.2 Annual or Quarterly Report to Security Holders HTML 27K
11: EX-15.1 Letter re: Unaudited Interim Financial Information HTML 25K
96: XML XBRL XML File -- Filing Summary XML 146K
69: R1 Document and Entity Information HTML 50K
56: R2 Consolidated Balance Sheets HTML 190K
67: R3 Consolidated Balance Sheets (Parenthetical) HTML 45K
71: R4 Consolidated Statements of Operations HTML 117K
90: R5 Consolidated Statements of Changes in Equity and HTML 117K
Comprehensive Income
58: R6 Consolidated Statements of Cash Flows HTML 230K
66: R7 Organization and Principal Activities HTML 31K
51: R8 Summary of Principal Accounting Policies HTML 127K
41: R9 Allowance for Doubtful Receivables HTML 52K
91: R10 Inventories HTML 40K
73: R11 Property, Plant and Equipment, Net HTML 47K
72: R12 Prepaid Land Use Right HTML 29K
78: R13 Accrued Expenses and Current Liabilities HTML 38K
79: R14 Derivative Financial Instruments HTML 71K
76: R15 Fair Value Measurement HTML 119K
80: R16 Bank Borrowings HTML 66K
68: R17 Convertible Senior Notes HTML 39K
70: R18 Accrued Warranty Costs HTML 37K
75: R19 Share-Based Compensation HTML 70K
99: R20 Tax Expense HTML 96K
86: R21 Distribution of Profit HTML 31K
62: R22 Related Party Transactions and Balances HTML 35K
74: R23 Commitments and Contingencies HTML 45K
64: R24 Segment Information HTML 50K
32: R25 Major Customers and Suppliers HTML 40K
87: R26 Additional Information - Financial Statement HTML 102K
Schedule I
95: R27 SUMMARY OF PRINCIPAL ACCOUNTING POLICIES HTML 251K
(Policies)
46: R28 SUMMARY OF PRINCIPAL ACCOUNTING POLICIES (Tables) HTML 86K
45: R29 ALLOWANCE FOR DOUBTFUL RECEIVABLES (Tables) HTML 49K
49: R30 INVENTORIES (Tables) HTML 36K
50: R31 PROPERTY, PLANT AND EQUIPMENT, NET (Tables) HTML 40K
52: R32 ACCRUED EXPENSES AND CURRENT LIABILITIES (Tables) HTML 37K
25: R33 DERIVATIVE FINANCIAL INSTRUMENTS (Tables) HTML 59K
84: R34 FAIR VALUE MEASUREMENT (Tables) HTML 107K
60: R35 BANK BORROWINGS (Tables) HTML 54K
63: R36 ACCRUED WARRANTY COSTS (Tables) HTML 36K
36: R37 SHARE-BASED COMPENSATION (Tables) HTML 67K
98: R38 TAX EXPENSE (Tables) HTML 90K
18: R39 COMMITMENTS AND CONTINGENCIES (Tables) HTML 41K
53: R40 SEGMENT INFORMATION (Tables) HTML 42K
89: R41 MAJOR CUSTOMERS AND SUPPLIERS (Tables) HTML 35K
34: R42 SUMMARY OF PRINCIPAL ACCOUNTING POLICIES (Details) HTML 57K
44: R43 SUMMARY OF PRINCIPAL ACCOUNTING POLICIES (Details HTML 70K
2)
48: R44 SUMMARY OF PRINCIPAL ACCOUNTING POLICIES (Details HTML 87K
3)
57: R45 SUMMARY OF PRINCIPAL ACCOUNTING POLICIES (Details HTML 32K
4)
24: R46 ALLOWANCE FOR DOUBTFUL RECEIVABLES (Details) HTML 42K
40: R47 INVENTORIES (Details) HTML 47K
20: R48 PROPERTY, PLANT AND EQUIPMENT, NET (Details) HTML 54K
88: R49 PREPAID LAND USE RIGHT (Details) HTML 33K
33: R50 ACCRUED EXPENSES AND CURRENT LIABILITIES (Details) HTML 51K
85: R51 DERIVATIVE FINANCIAL INSTRUMENTS (Details) HTML 41K
37: R52 DERIVATIVE FINANCIAL INSTRUMENTS (Details 2) HTML 31K
54: R53 FAIR VALUE MEASUREMENT (Details) HTML 51K
19: R54 FAIR VALUE MEASUREMENT (Details 2) HTML 38K
22: R55 FAIR VALUE MEASUREMENT (Details 3) HTML 36K
47: R56 BANK BORROWINGS (Details) HTML 41K
28: R57 BANK BORROWINGS (Details 2) HTML 48K
93: R58 BANK BORROWINGS (Details 3) HTML 81K
59: R59 BANK BORROWINGS (Details 4) HTML 45K
77: R60 CONVERTIBLE SENIOR NOTES (Details) HTML 96K
39: R61 ACCRUED WARRANTY COSTS (Details) HTML 36K
42: R62 SHARE-BASED COMPENSATION (Details) HTML 169K
83: R63 TAX EXPENSE (Details) HTML 40K
81: R64 TAX EXPENSE (Details 2) HTML 32K
61: R65 TAX EXPENSE (Details 3) HTML 66K
82: R66 TAX EXPENSE (Details 4) HTML 59K
38: R67 TAX EXPENSE (Details 5) HTML 91K
65: R68 DISTRIBUTION OF PROFIT (Details) HTML 41K
94: R69 RELATED PARTY TRANSACTIONS AND BALANCES (Details) HTML 52K
21: R70 COMMITMENTS AND CONTINGENCIES (Details) HTML 49K
31: R71 COMMITMENTS AND CONTINGENCIES (Details 2) HTML 43K
55: R72 COMMITMENTS AND CONTINGENCIES (Details 3) HTML 40K
27: R73 SEGMENT INFORMATION (Details) HTML 37K
97: R74 MAJOR CUSTOMERS AND SUPPLIERS (Details) HTML 36K
35: R75 Additional Information - Financial Statement HTML 37K
Schedule I (Details)
29: R76 Additional Information - Financial Statement HTML 114K
Schedule I (Details 2)
30: R77 Additional Information - Financial Statement HTML 42K
Schedule I (Details 3)
23: R78 Additional Information - Financial Statement HTML 78K
Schedule I (Details 4)
26: R79 Additional Information - Financial Statement HTML 124K
Schedule I (Details 5)
43: EXCEL XBRL IDEA Workbook -- Financial Report XLS 2.42M
12: EX-101.INS XBRL Instance -- tsl-20111231 XML 3.19M
14: EX-101.CAL XBRL Calculations -- tsl-20111231_cal XML 325K
15: EX-101.DEF XBRL Definitions -- tsl-20111231_def XML 1.01M
16: EX-101.LAB XBRL Labels -- tsl-20111231_lab XML 3.03M
17: EX-101.PRE XBRL Presentations -- tsl-20111231_pre XML 1.45M
13: EX-101.SCH XBRL Schema -- tsl-20111231 XSD 266K
92: ZIP XBRL Zipped Folder -- 0001104659-12-022420-xbrl ZIP 300K
Exhibit 4.10
Translation
Jiangsu Zhongneng - Changzhou Trina Solar Energy Supplementary Agreement
SUPPLEMENTARY AGREEMENT NO. 4 TO
POLYSILICON SUPPLY AGREEMENT
Party A’s Contract No.: SSC000119
Party B’s Contract No.: TCZ-A1130-0803-CGC-120-0
Party A: Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd.
Party B: Changzhou Trina Solar Energy Co., Ltd.
Whereas, Party A and Party B signed a Polysilicon Supply Contract (Party A’s Contract No.: SSC000119) on March 29, 2008 and signed a Supplementary Agreement I to the Polysilicon Supply Contract (Party A’s Contract No.: SSC000119, “Supplementary Agreement I”) on August 19, 2008, and also signed the memoranda on December 8, 2008, January 21, 2009 and April 1, 2009 respectively, signed the Supplementary Agreement II to the Polysilicon Supply Contract ( “Supplementary Agreement II”) on August 24, 2009 and the Supplementary Agreement III to the Polysilicon Supply Contract ( “Supplementary Agreement III”) on October 23, 2009 and a memorandum on November 10, 2009 (the foregoing eight agreements and memoranda hereinafter collectively referred to as the “Original Contract”). Based on the principle that the existing effectiveness of partial Original Contract is not altered by this Supplementary Agreement and the exhibits hereto, and after thorough consultation in equal and voluntary basis, both parties hereby enter into the following amendments regarding such price, quantity and etc. as stipulated in the Original Contract for mutual compliance:
1. The provisions on the quantity and price of silicon wafers in Article 4 of and the exhibits to Supplementary Agreement I shall be substituted by this Supplementary Agreement. Both parties agree to invalidate the provisions of Article 4 of Supplementary Agreement II, and agree to amend the provisions of Article 1 of Supplementary Agreement II from “Quantities and Prices of Polysilicon and Monosilicon Wafers (125x125mm) in 2010 to 2015 Supply Plan” to “Quantities and Prices of Polysilicon and Polysilicon Wafers (156x156mm) in 2010 to 2015 Supply Plan”. The detailed quantities and prices of polysilicon and polysilicon wafers for 2010 to 2015 after amendment shall be referred to Exhibit B-3 hereto, and the detailed specifications of polysilicon wafers shall be referred to the Product Specification attached hereto. All the prices under this Agreement are tax (17%) inclusive prices, and the currency “yuan” used herein shall refer to RMB.
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2. The conditions for calculation in Exhibit B-3: |
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Temporary output power of polysilicon wafer: 3.85 w/pc | |
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Temporary polysilicon consumed for unit watt: 6.2 g/w |
3. Both parties hereby agree upon the total purchase quantity of polysilicon by Party B from 2010 to 2015 (including polysilicon and polysilicon wafers converted polysilicon). Party A undertakes that it will provide Party B with the majority of the polysilicon wafers manufactured by the silicon wafer cutting factory which is invested and established by Party A in Changzhou Trina PV Industrial Park from 2011:
1
3.1. The total purchase quantity of polysilicon converted from the quantity of silicon wafers and polysilicon purchased by Party B in 2010 is 3,900 tons, of which Party B undertakes to purchase 150MW polysilicon wafers at the unit price of [****]† yuan/pc since March, i.e. 38,960,000 pieces based on the temporary calculation standard of 3.85 w/pc; 930 tons of polysilicon based on the temporary standard of 6.2 g/w. Then the remaining purchase quantity of polysilicon is 2,970 tons, at a unit price of [****]† yuan/kg as prescribed in Supplementary Agreement II. As for the polysilicon wafers to be purchased in March and April 2010, both parties agree that Party A shall supply Party B with no fewer than 2 million pieces of polysilicon wafers each month, and the short thereof shall be made up during the period from May to December 2010.
3.2. Party B undertakes to purchase 300MW of polysilicon wafers in 2011, and the quantity of polysilicon to be purchased shall be subject to Exhibit B-3 hereto.
3.3. Both parties undertake that on the precondition that the total amount under the Original Contract shall not be decreased, the annual quantity of polysilicon to be purchased during 2012 to 2015 shall be subject to Exhibit B-3 hereto, and the quantity of silicon wafers to be purchased shall be temporarily subject to Exhibit B-3 hereto. In case either party requests to amend the purchase quantity of silicon wafers, such party shall submit a written application for amendment to the other party in the third quarter of the prior year, and the actual purchase quantity shall be otherwise negotiated by both parties. If both parties need to amend the purchase quantity of silicon wafers, the minimum quantity of polysilicon wafers to be purchased by Party B shall be 400MW for 2012, 500MW for 2013, 600MW for 2014 and 700MW for 2015 respectively. If the amended purchase quantity of polysilicon wafers each year falls short of the quantity set out in Exhibit B-3, the short shall be converted to polysilicon and purchased by Party B in such year. If such amendment results in the total purchase amount less than the amount set out in Exhibit B-3, Party B undertakes that it shall annually make up for the insufficient purchase amount of polysilicon wafers by equal shares during 2016 to 2020.
4. The silicon price adjustment process under this Agreement shall follow the provisions set out in Article 9 of Supplementary Agreement II. In addition, when the yearly or quarterly price of silicon wafers hereunder during such year or quarter as provided by this Agreement has decreased by [****]†% or more, or increased by [****]†% or more, compared with the current market price, both parties may initiate the price adjustment process as prescribed in Article 9 of Supplementary Agreement II. In case that the price of silicon wafers fluctuates as a result of the innovation of silicon wafer processing technologies, etc., the price thereof shall be otherwise negotiated by both parties.
† This portion of the Supplementary Agreement No. 4 to Polysilicon Supply Agreement has been omitted and filed separately with the Securities and Exchange Commission, pursuant to Rule 24b-2 under the Exchange Act of 1934.
2
5. Any extra profits gained from technical cooperation between both parties shall be shared by both parties through friendly consultation. If any advance of battery technology requires adjusting the thickness of silicon wafers, Party B shall make adjustment to the current thickness of 200 µm +/-20 µm. The silicon wafers yield rate shall rise by one piece with the thinning out of every 10 µm of wafer thickness. The price of silicon wafers then shall be otherwise negotiated.
6. The indicators of silicon wafers, such as the appearance and quality, shall comply with the specifications agreed upon by both parties in Product Specification attached hereto, and the indicator of electrical property shall meet the manufacturing requirement of Party B (i.e. Party B requires that the electrical property conversion efficiency of silicon wafers produced by Party A should at least equal the average electrical property conversion efficiency of silicon wafers produced by a third party silicon wafer provider of Party B, or the electrical property conversion efficiency of silicon wafers self-produced by Party B during the same purchase period. Party A is entitled to choose either of the foregoing electrical property conversion efficiency as the manufacturing requirement of Party B). If any dispute in connection with quality arises, it shall be determined by a third party jointly designated by both parties. Such determination of the third party shall be subject to Sub-Article 6, Article 4 of Supplementary Agreement I. Any amendment to the quality indicator shall be subject to Article 3.4 of the Supply Contract dated March 29, 2008.
7. Both parties undertake that this Supplementary Agreement shall set out the amendments by Party A and Party B to the Original Contract previously entered into. In case of any inconsistencies between this Supplementary Agreement and the Original Contract, this Supplementary Agreement shall prevail. All other matters that are not covered hereby shall be subject to the Original Contract.
8. This Agreement shall have six original copies, with each party holding three copies. Each copy has the same legal effects and shall take effect after being signed and sealed by both parties.
9. Any matters that are not covered hereby may be otherwise agreed upon by both parties in another supplementary agreement.
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Party A: |
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Jiangsu Zhongneng |
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Party B: |
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Changzhou Trina Solar Energy |
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Authorized |
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Authorized |
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Date: |
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Date: |
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3
Exhibit (B-3)
150MW Polysilicon Wafers to be Purchased in 2010; Revised Quantity and Price for Purchase from 2011 to 2015:
Total Silicon Purchase Quantity for 2010 is 3,900 tons. Annual Silicon Purchase Quantity for 2011-2015 is 5,300 tons.
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Year |
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2010 (Mar-Dec) |
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2011 |
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2012 |
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2013 |
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2014 |
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2015 |
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Total |
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Quantity of Polysilicon (ton) |
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2,970 |
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3,440 |
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2,820 |
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2,200 |
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1,580 |
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960 |
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13,970 |
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Unit Price of Polysilicon (10 thousand yuan/ton) |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
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Amount (10 thousand yuan) |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
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Demand for Polysilicon (2010-2015) (MW) |
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140.4 |
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300 |
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400 |
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500 |
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600 |
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700 |
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2,640 |
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Quantity of Polysilicon Wafers (10 thousand pieces) |
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3,646 |
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7,792 |
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10,390 |
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12,987 |
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15,584 |
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18,182 |
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68,581 |
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Unit Price of Polysilicon Wafers (yuan/piece) |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
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Amount (10 thousand yuan) |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
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Total Amount (10 thousand yuan) |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
Polysilicon wafer yields, processing fee rate and price based on the unit price of polysilicon
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Year |
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Wafer Yields Per Kilogram |
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Processing Fee Rate |
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Polysilicon Wafer (yuan/piece) |
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Polysilicon |
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2010 |
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40.0 |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
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2011 |
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40.3 |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
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2012 |
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40.5 |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
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2013 |
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41.0 |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
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2014 |
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42.0 |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
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2015 |
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42.5 |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
Note: Each price for silicon wafer is the purchase price agreed upon by both parties. Unless the market price of silicon wafer triggers the price adjustment process as prescribed in Article 9 of Supplementary Agreement II, the price for silicon wafer shall not be amended. The change of price of silicon does not necessarily lead to the change of price of silicon wafer.
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Note: |
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Output power of monosilicon wafer |
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2.52 w/piece |
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Output power of polysilicon wafer |
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3.85 w/piece |
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Polysilicon consumed for unit watt: |
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6.2 g/w |
Note 2: The price for January and February 2010 is [****]† yuan/piece, and the quantity is 2.5 million pieces (around 9.6MW).
Additional Supply Plan for 2016 to 2020 Amended by Supplementary Agreement II
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Year |
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2016 |
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2017 |
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2018 |
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2019 |
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2020 |
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Total |
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Quantity of Polysilicon (ton) |
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2,650 |
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2,650 |
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2,650 |
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2,650 |
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2,650 |
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Unit Price of Polysilicon (10 thousand yuan/ton) |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
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Amount (10 thousand yuan) |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
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Quantity of Monosilicon Wafer (ten thousand pieces) |
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8,500 |
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8,700 |
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8,900 |
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11,149 |
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10,000 |
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Unit Price of Monosilicon Wafer (yuan/piece) |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
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Total Amount (10 thousand yuan) |
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[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
[**** |
]† |
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[**** |
]† |
† This portion of the Supplementary Agreement No. 4 to Polysilicon Supply Agreement has been omitted and filed separately with the Securities and Exchange Commission, pursuant to Rule 24b-2 under the Exchange Act of 1934.
4
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Trinasolar | ||||||||||
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Changzhou Trina Solar Energy Co., Ltd. | ||||||||||
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Product Name |
Outsourcing-Multi-Crystalline Si Wafer | ||||||||
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Document Name |
156*156 Multi-Crystalline Wafer Specification | ||||||||
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Document Number |
PS-WX-W-0002 | ||||||||
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Product Specification |
Version Number |
A | ||||||||
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Material properties | ||||||||||
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Property |
Specification |
Referenced Standard |
Random | |||||||
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Crystal Growth Method |
DSS |
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AQL=0.25
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Donor Type/Dopant |
P/Boron |
ASTM F42 | ||||||||
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Oxygen Content |
< 1 x 1018 atoms/cm3 (head of silicon robs) or pursuant to the specifications of raw materials supplied |
ASTM F1188/GB1557-1989 | ||||||||
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Carbon Content |
< 5.0 x 1017 atoms/cm3 (tail of silicon robs) or pursuant to the specifications of raw materials supplied |
ASTM F1391/GB1558-1997 | ||||||||
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Electrical properties | ||||||||||
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Resistivity |
0.8 - 3 ohm-cm; The variation of resistivity of a single silicon wafer should not exceed 12%, or 0.5-3, pursuant to the specifications of raw materials supplied |
ASTM F43 |
AQL=0.25 | |||||||
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Lifetime |
>1.0µs, or 1.0 pursuant to the specifications of raw materials supplied (Semilab WT 2000 u-PCD) |
Measured the surface of wafer after cleaning: GB1553-1997 | ||||||||
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Geometry | ||||||||||
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Geometry |
Square |
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AQL=1.0
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Dimensions (WxW) |
156.0 x 156.0 (±0.5) mm |
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Right Angle |
90 ± 0.3 Degree |
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Chamfer Size |
Hypotenuse |
0.5 - 2.0 mm |
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Cathetus |
0.35 - 1.42 mm |
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Chamfer angle |
45° |
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Thickness |
200 µm ± 20 µm |
ASTM F533/GB6618-1995 Q/320411 AFY03-2006 | ||||||||
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Blade wafer |
Not acceptable (definition of a blade wafer: the thickness of the part 2mm to the edge is lower than 180µm, or higher than 220 µm at the highest point, and the thickness difference from the part 1 mm to the edge exceeds 5µm) |
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TTV |
< 30µm |
ASTM F533, F657/GB6618-1995 | ||||||||
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Saw marks |
Depth < 15µm (the difference between the highest and lowest points of Rt); without color difference and edge marks |
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Surface quality |
Cleaned, no grease stains, inclusion or pin hole Mechanical polishing or chemical corrosion of the surface of at least 0.05mm is required before cutting. |
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Edge Chip |
Width < 0.5 mm, Length < 1.0 mm; max. 2 piece; V-shape chip, Crack and Corner missing unacceptable |
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Surface Chip |
Depth < 0.5 mm, Length < 3.0 mm |
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Warpage |
< 75µm |
ASTM F657/GB6619 or 6620-1995; Q/320411 AFY03-2006 | ||||||||
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Microcrystal |
Single area < 3*3 mm2, total area < 3*3 cm2 |
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Package & Labels | ||||||||||
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Package |
Trina Standard, 100 pcs/package; | |||||||||
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Labels |
Part No., P.O. No., Lot No., No of wafers, Dimension | |||||||||
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Originator |
Review |
Approval | ||||||||
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Signature: |
Date: |
Signature: |
Date: |
Signature: |
Date: | |||||
Notes: 1. Defective rate < 0.3%; 2. Trial production of 2,000 pcs per batch, defective rate of electric property of battery < 0.5%.
5
| This 20-F Filing | Date | Other Filings | ||
|---|---|---|---|---|
 | ||||
| 3/29/08 | ||||
| 8/19/08 | 6-K | |||
| 12/8/08 | ||||
| 1/21/09 | ||||
| 4/1/09 | ||||
| 8/24/09 | ||||
| 10/23/09 | ||||
| 11/10/09 | ||||
| For The Period Ended | 12/31/11 | |||
| Filed On / Filed As Of | 3/29/12 | |||
| Top | List All Filings | |||